| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670347 | Microelectronic Engineering | 2005 | 5 Pages |
Abstract
The thermal stability of Ni silicide, in comparison to the more conventionally used Co silicide, is studied by X-ray reflectivity. These data were complemented by sheet resistance measurements, transmission electron microscopy, time-of-flight Rutherford backscattering spectrometry, X-ray diffraction and time-of-flight elastic recoil detection analysis.
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Authors
M. Van Hove, Y. Travaly, T. Sajavaara, B. Brijs, W. Vandervorst, A. Lauwers, O. Chamirian, J.A. Kittl, A.M. Jonas, K. Maex,