Article ID Journal Published Year Pages File Type
9670349 Microelectronic Engineering 2005 11 Pages PDF
Abstract
The continuous improvement of Si-based active device technology requests further improvements in RF passive technology, to overcome limitations in power consumption, noise figure, phase noise and gain. The present paper gives an overview of trends and challenges for Si-based RF passives for low power and high frequency applications.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
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