| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670349 | Microelectronic Engineering | 2005 | 11 Pages |
Abstract
The continuous improvement of Si-based active device technology requests further improvements in RF passive technology, to overcome limitations in power consumption, noise figure, phase noise and gain. The present paper gives an overview of trends and challenges for Si-based RF passives for low power and high frequency applications.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
S. Decoutere, G. Carchon, M. Dehan, A. Mercha,