| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670363 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
The power durability of a new developed Ta-Si-N/Cu/Ta-Si-N metallization was tested in comparison with an Al/Ti metallization under accelerated test conditions. The Cu metallization system showed a lifetime more than three orders of magnitude longer than that of the Al metallization. Both damaged metallizations were investigated after accelerated tests using scanning electron microscopy and focused ion beam technique. The different acoustomigration resistance of the Cu-based system is discussed.
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Authors
M. PekarÄıÌková, S. Menzel, D. Reitz, H. Schmidt, K. Wetzig,