Modeling of residual stresses in thin films deposited by electron beam evaporation

The modeling of residual stresses generally deals with the calculation of the thermal ones alone. In the present work, a model is proposed, where intrinsic residual stresses are calculated explicitly. It is based on the Tsui-Clyne model, which was modified in order to describe the deposition of n different deposited layers on the substrate with the same set of equations as in a mono-layer system. For that we introduced the notion of “virtual substrate” and “effective parameters”. The calculated values are compared with experimental results obtained for the following systems: Ta/Si, Mo/Si, Al/SiOx/Si and Pd/SiOx/Si. The depositions were performed by electron beam evaporation onto Si and Si/SiOx (1 0 0) substrates with varying film thickness.