Ge-channel p-MOSFETs with ZrO2 gate dielectrics

Germanium MOS capacitors with a thin high-k (ZrO2) dielectric (EOT 2.2 nm) were fabricated on epitaxial strained-Ge grown on relaxed-SiGe substrates. Strained-Ge material parameters were extracted from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of MOS capacitors and were used in the simulation of strained-Ge channel p-MOSFETs with high-k gate dielectric. The simulated devices exhibited a sub-100 mV/decade subthreshold voltage swing and a low gate leakage.