Structure and composition evolutions of Er-doped Si-rich SiO2 film under annealing

Erbium doped silicon rich SiO2 thin films were prepared by sputtering and ion implantation methods. The evolutions of the microstructure and the interactions among erbium, oxygen and silicon atoms under annealing have been studied by means of Raman scattering and X-ray photoelectron spectroscopy (XPS). It was found that amorphous and crystalline silicon nanoparticles have been formed upon annealing at 773 and 1273 K, respectively. After a 773 K annealing, the Er-O-Si complex is formed, and it is broken at the temperatures higher than 1173 K. The favored condition of this system, which has Si nanocrystals and optically active Er ions embedded in SiO2, can be obtained by heat treatment at the temperatures higher than 1273 K.