| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670425 | Microelectronic Engineering | 2005 | 13 Pages |
Abstract
In this paper, we intend to demonstrate the possible presence of atomic-silicon cryptates in siloxanic networks by using a density functional approach. Since model molecules have been employed to model the candidate sites to host atomic silicon, we found that metastable adducts can be formed only in regions where the siloxanic network is not subjected to steric constraints; differently, stationary states are unstable in highly reticulated siloxanic networks. Our conclusions reveal that Si atom is kept at the surface in atomic-like configuration by Ï charge donation from oxo-oxygen atoms into the empty Si pÏ orbital and by Ï charge back-donation from singly occupied Si 3pÏ orbitals into empty Ï* model molecule orbitals.
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Authors
G. Giorgi, P. Belanzoni, G.F. Cerofolini, A. Sgamellotti,
