Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670447 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
High-κ gate dielectrics and metal gate electrodes are required for enabling continued equivalent gate oxide thickness scaling, and hence high performance, and for controlling gate oxide leakage for both future silicon and emerging non-silicon nanoelectronic transistors. In addition, high-κ gate dielectrics and metal gates are required for the successful demonstration of high performance logic transistors on high-mobility non-silicon substrates with high ION/IOFF ratios.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Robert Chau, Justin Brask, Suman Datta, Gilbert Dewey, Mark Doczy, Brian Doyle, Jack Kavalieros, Ben Jin, Matthew Metz, Amlan Majumdar, Marko Radosavljevic,