Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670453 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfOxNy/Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 Ã
with a low leakage current of 1.8 Ã 10â5A/cm2 at VG = â1V was achieved after 600 °C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.
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Authors
Chao-Ching Cheng, Chao-Hsin Chien, Ching-Wei Chen, Shih-Lu Hsu, Ming-Yi Yang, Chien-Chao Huang, Fu-Liang Yang, Chun-Yen Chang,