| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670458 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
In this work, silicon insulator interfaces are characterized by detailed photocurrent analysis. Results obtained for a variety of samples with different insulator layers and layer thicknesses are presented and discussed. The results show the applicability of the technique for a reliable process control and include data on high-k layers for the first time. Comparison of experiment and simulation is used to explain the injection level dependence of the measurements.
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Authors
M. Rommel, M. GroÃ, A. Ettinger, M. Lemberger, A.J. Bauer, L. Frey, H. Ryssel,