Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements

A characterization of traps in ultrathin-oxide MOSFETs by low frequency noise measurements is presented. Drain and gate current noise measurements are investigated. 1/f drain noise magnitude allows extraction of slow oxide interface trap density. Random Telegraph Signal (R.T.S.) gate noise allows to extract properties of defects of the dielectric, such as trap energy level, cross section and its localization from the Si/Si02 interface.