| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670465 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance of the tip image in the substrate for a quantitative understanding of the image contrast. The Contact Potential Difference and differential capacitance were probed by means of bias modulation and lock-in detection at the 1st and 2nd harmonic, respectively. A difference in topography-capacitance cross-correlation was found between Al2O3 deposited on hydrogen-terminated Si and thermal SiO2, which can be attributed to substrate-inhibited versus non-inhibited deposition.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
J.M. Sturm, A.I. Zinine, H. Wormeester, R.G. Bankras, J. Holleman, J. Schmitz, Bene Poelsema,