Characterization of high and low k dielectrica using low-energy Time of Flight Elastic Recoil Detection

A low-energy Time of Flight Elastic Recoil Detection set-up has been developed for the characterization of ultra-thin films, e.g. high and low k dielectrica. The performance is demonstrated by sample analysis of low k materials as they normally contain H, C, O, and Si. The excellent depth resolution is shown on a 6 nm HfSiO and a multistack of 6 nm SiO2, 6 nm Si3N4, 2 nm SO2 on top of Si