| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670494 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
In this work we present an original study that shows how to reduce the negative fixed charges of atomic layer deposited Al2O3. The influence of the aluminium oxide growth temperature on this charge is studied here for the first time. The effect of annealing is also considered, and an optimal process is proposed. Relationship with H content is investigated as well. Finally, influences of these charges on the Al2O3 transport properties are analyzed.
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Physical Sciences and Engineering
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Hardware and Architecture
Authors
J. Buckley, B. De Salvo, D. Deleruyelle, M. Gely, G. Nicotra, S. Lombardo, J.F. Damlencourt, Ph. Hollinger, F. Martin, S. Deleonibus,