Effects of ALD HfO2 thickness on charge trapping and mobility

The effects of HfO2 thickness on charge trapping and mobility were investigated. The impact of fast transient electron trapping on DC measurements results in underestimating channel carrier mobility. Scaling the physical thickness of the HfO2 dielectric causes less charge trapping and higher mobility. A HfO2 -based high-k solution requires fine-tuning the thickness of the high-k film to maintain a balance between electron trapping in thicker films and increased leakage current in thinner films.