Coupling effect between the front and back interfaces in thin SOI MOSFETs

The coupling effect between the front and back channels in thin SOI MOSFETs is investigated. Comparing the results in long channel and short channel, it was found that, in the short channel, series resistance affects the transconductance curve, impacts the coupling effect and complicates the distinction between the front and back channels. This fact was also confirmed by the device simulation. Furthermore, the difficulty to separate the two channels, on the electrical characteristic of multiple-gate structures, is discussed.