Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5

We investigated the reproducible and memory resistance switching characteristics of pulsed-laser deposited thin polycrystalline Nb2O5 film for application to nonvolatile memory devices. Reproducible switching cycles were observed, and the resistance ratios of two distinct conduction states were approximately two orders of magnitude. Two resistance switching states were also obtained for pulse duration as much as 10 ns. The degradation of both resistance states at 125 °C, indicating memory characteristics, was expected within 8 percent for 10 years. We also investigated the temperature-dependent conduction mechanisms of the high resistance state and the low resistance state, and we discussed a plausible resistance switching mechanism.