| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670505 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
The charge trapping characteristics were evaluated for Al2O3 with metal-nitride (TiN) nanocrystals, which was simply prepared by rf magnetron co-sputtering method, as a new charge trapping layer of a metal-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without TiN nanocrystals, Al2O3 with TiN nanocrystals exhibits larger width of capacitance-voltage hysteresis and higher programming speed. The formation of highly thermally stable TiN nanocrystals embedded in Al2O3 was confirmed by transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analyses.
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Hardware and Architecture
Authors
S. Choi, S.S. Kim, H. Yang, M. Chang, S. Jeon, C. Kim, D.Y. Kim, H. Hwang,