Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670507 | Microelectronic Engineering | 2005 | 8 Pages |
Abstract
The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
G. Pourtois, A. Lauwers, J. Kittl, L. Pantisano, B. Sorée, S. De Gendt, W. Magnus, M. Heyns, K. Maex,