Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670509 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
Work function (Ïm) of metal transistor gates was controlled by using Al-Ni and Ni-Ta alloys made through an interdiffusion process, in which stacks of different metals were annealed. In addition to conventional capacitance-voltage measurements for Ïm evaluation, Ïm uniformity was also measured microscopically. The average Ïm of the Al-Ni alloy was successfully changed compared to that of pure Al by interdiffusion at 500 °C. The Ïm nonuniformity of Al-Ni, however, was problematic. Though Ni-Ta alloys required interdiffusion at a higher temperature of 700 °C, the Ni-Ta alloys had better Ïm uniformity. Thus, the Ni-Ta alloy is a more suitable candidate for use in metal gates of high-integrity transistors.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
T. Matsukawa, Y.X. Liu, M. Masahara, K. Ishii, K. Endo, H. Yamauchi, E. Sugimata, H. Takashima, T. Higashino, E. Suzuki, S. Kanemaru,