| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 9670511 | Microelectronic Engineering | 2005 | 4 Pages | 
Abstract
												We used an ab initio embedded cluster method to study and compare three charged states of the Si-Si dimer configurations of oxygen vacancies in α-quartz and amorphous silica. The Si-Si bond in the neutral vacancy remains largely the same in both crystalline and amorphous SiO2. In α-quartz the positively charged dimer EⲠcentre exists only as a meta-stable configuration, whereas in amorphous silica stable dimer configuration can be formed at favorable precursor sites. Our results demonstrate that negatively charged dimer oxygen vacancies can be formed in α-quartz.
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											Authors
												P.V. Sushko, S. Mukhopadhyay, A.M. Stoneham, A.L. Shluger, 
											