| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670515 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
Capacitor performance of amorphous PrTixOy dielectric films deposited on TiNx metal electrodes to form MIM structures with Al top electrodes is demonstrated for the first time. The PrTixOy capacitors were fabricated within the temperature budget of back end processes. Preliminary data on the composition of the dielectric layers and the interaction of water with the films was obtained by X-ray photoelectron spectroscopy (XPS). The I(V) and C(V) device characteristics are discussed.
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Authors
Ch. Wenger, R. Sorge, T. Schroeder, A.U. Mane, G. Lippert, G. Lupina, J. DÄ
browski, P. Zaumseil, H.-J. Muessig,