Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670521 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
The dielectric properties of porous ULK/Cu interconnects designed for sub 65Â nm nodes are degraded at high bias-stress. The resulting increase of dielectric constant and defect density can be estimated from the Poole-Frenkel modeling of the leakage currents above 1Â MV/cm. More generally, the porous SiCOH dielectric materials showing this transport mechanism appear to be inherently less reliable when their initial k value is the lowest. This trend is obviously a major issue for further downscaling developments of porous ULK/Cu interconnects.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
C. Guedj, X. Portier, F. Mondon, V. Arnal, J.F. Guillaumond, L. Arnaud, J.P. Barnes, V. Jousseaume, A. Roule, S. Maitrejean, L.L. Chapelon, G. Reimbold, J. Torres, G. Passemard,