Article ID Journal Published Year Pages File Type
9670521 Microelectronic Engineering 2005 4 Pages PDF
Abstract
The dielectric properties of porous ULK/Cu interconnects designed for sub 65 nm nodes are degraded at high bias-stress. The resulting increase of dielectric constant and defect density can be estimated from the Poole-Frenkel modeling of the leakage currents above 1 MV/cm. More generally, the porous SiCOH dielectric materials showing this transport mechanism appear to be inherently less reliable when their initial k value is the lowest. This trend is obviously a major issue for further downscaling developments of porous ULK/Cu interconnects.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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