Investigation on trapping and detrapping mechanisms in HfO2 films

In this contribution, the kinetics of the trapping/detrapping process involved in hysteresis phenomena of HfO2 films have been investigated on a large temperature range, from 20K to 500K range. Using an appropriate methodology, charge trapping and detrapping are shown, for the first time, to be temperature independent when they are corrected for the threshold voltage variation with temperature. This result evidenced here, strongly suggests that analysis of trapping and detrapping mechanisms must be compared at same dielectric field. Moreover, it confirms the importance of the direct tunneling mechanism especially Shockley-Read-Hall process for all operational conditions.