Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670526 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
The gate dielectric breakdown induced microstructral changes in HfO2 high-κ gate stacks are analyzed using high resolution transmission electron microscopy. A new failure mechanism along the interface of HfO2/spacer has been observed in HfO2 high-κ gate stacks. This breakdown which is more common in accumulation mode stressing conditions in HfO2 high-κ /poly-Si gate stacks has not been observed in oxynitride gate dielectrics. It is believed that this interfacial breakdown could be dependent on enhanced electric field at the source/drain extension regions and on the corner geometry of the high-/poly-Si gate stacks.
Keywords
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
R. Ranjan, K.L. Pey, C.H. Tung, L.J. Tang, B. Elattari, T. Kauerauf, G. Groeseneken, R. Degraeve, D.S. Ang, L.K. Bera,