Article ID Journal Published Year Pages File Type
9670529 Microelectronic Engineering 2005 4 Pages PDF
Abstract
In this work, the effective mobility in n- and p-channel FinFETS with silicon oxynitride and HfO2 gate dielectrics and TaN gate electrode is studied as a function of the inversion charge density using a split C-V technique. The mobility behavior in narrow-fin devices is compared to that in quasi-planar wide-fin devices, and the mechanisms responsible for the observed differences are discussed. The devices with HfO2 and silicon oxynitride gate dielectrics exhibit similar mobility behavior.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
, , , , , ,