Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670532 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
IETS (Inelastic Electron Tunnelling Spectroscopy) technique was used in Metal-Oxide-Silicon (MOS) tunnel junctions to provide information concerning the vibrational and excitational modes. In this work, we use the IETS method to investigate electron-molecular vibration coupling in SAMs (Self Assembled Monolayer) using the MOS tunnel junctions as a test-bed.
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Authors
C. Petit, G. Salace, S. Lenfant, D. Vuillaume,