Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670533 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
The replacement of SiO2 by so-called high-k oxides is one of the major challenges for the semiconductor industry to date. Based on electronic structure calculations and ab-initio molecular dynamics simulations, we are able to provide a consistent picture of the growth process of a class of epitaxial oxides around SrO and SrTiO3. The detailed understanding of the interfacial binding principles has also allowed us to propose a way to engineer the band-offsets between the oxide and the silicon substrate.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
C.J. Först, C.R. Ashman, K. Schwarz, P.E. Blöchl,