Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670539 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
In this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that existing physical models are inadequate to describe the thin-oxide regime. Two regimes of silicon oxidation are assumed to exist. The first regime responsible for the growth of up to 2-nm thick oxides including native oxides, considers electron tunneling through the growing oxide. The second regime occurs for thicker oxides and involves conventional diffusion of H2O molecules.
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Authors
Alexey Kovalgin, Andre Hof, Jurriaan Schmitz,