Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670540 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
The electrical quality of ultra-thin (â¼1nm) Plasma and Thermal nitrided silicon oxide layers was investigated with Conductive AFM and a macroscopic I-V measurement setup. PN layers were found to be superior to TN layers. A longer nitridation time resulted in a better quality of the layer. Annealing in N2 was not beneficial and re-oxidation resulted in a lower leakage due to a significant increase in the physical thickness. A trap-assisted kind of tunneling was observed in these layers. The exact role of nitrogen herein is not yet well understood.
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Authors
W. Polspoel, W. Vandervorst, J. Pétry, T. Conard, A. Benedetti,