| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670545 | Microelectronic Engineering | 2005 | 9 Pages |
Abstract
Line edge roughness of chemically amplified resists depends on many parameters. In a practical situation, all settings are chosen to be at their optimum, giving the smallest LER. Starting from this situation, the trade-off between four important parameters (shot noise, secondary electron drift, resist polymer size and post-exposure bake diffusion), is investigated in this paper.
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Authors
L.H.A. Leunissen, M. Ercken, G.P. Patsis,