| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670585 | Microelectronic Engineering | 2005 | 4 Pages |
Abstract
A process scheme for the fabrication of a low temperature SiGe V-groove MOSFET is demonstrated. The transfer and output characteristics show promising results for the device performance. The source/drain resistance and the quality of the gate insulator/SiGe channel must be optimized for device operation improvement.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
S. Koliopoulou, P. Dimitrakis, D. Goustouridis, S. Chatzandroulis, P. Normand, D. Tsoukalas, H. Radamson,