Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670587 | Microelectronic Engineering | 2005 | 7 Pages |
Abstract
Maskless fabrication techniques of nanoelectrode with nanogaps are investigated, which use sputter etching technique by Ga focused ion beam (FIB). The etching steps are reliably controlled in situ by monitoring a current fed to the films. 30 keV Ga FIB with a beam size of 12 nm is irradiated on double layer films consisting of 10-30 nm thick Au top conducting layer and 1-2 nm thick Ti bottom adhesion layer to form nanowires and gaps. The films are deposited on a silicon substrate on which 200 nm of oxide has been thermally grown and patterned to define 5-7 μm wide strips by photolithography and Ar sputter etching. By the present techniques nanogaps with a width much smaller than a beam diameter are fabricated. The minimum gap width of â¼3 nm and the highest gap resistivity of â¼80 GΩ are obtained.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Takashi Nagase, Kenji Gamo, Tohru Kubota, Shinro Mashiko,