| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670588 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
A method of fabrication of patterned magnetic nanodots by means of laser interference lithography is presented. This method includes the use of a diluted positive photoresist, and modifications in the etching angle and acceleration voltage of the ion beam etching process. Vertical standing waves were suppressed by using a high exposure dose (supra-exposure) instead of an antireflective coating. Field dependent magnetic force microscopy was used to measure the switching field distribution, which was found to range from 80 to 192Â kA/m.
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Authors
R. Murillo, H.A. van Wolferen, L. Abelmann, J.C. Lodder,