Ordered quantum dots formation on engineered template by molecular beam epitaxy

We have achieved partial ordering of InAs quantum dots (QDs) grown on a flat GaAs (0 0 1) substrate. Although the growth of the first QD layer results in random distribution of QDs, subsequent processes that involve multiple cycles of capping, regrowth and annealing have turned the flat substrate into a template with stripes in the [11¯0] direction. Regrowth on the engineered template results in chains of relatively uniform InAs QDs connected in series.