Article ID Journal Published Year Pages File Type
9670628 Microelectronic Engineering 2005 6 Pages PDF
Abstract
Three-dimensional simulation of resist pattern deformation by surface tension at the drying process of rinse liquid after development is introduced. The deformed pattern is expressed by the cell-shift model, which gives the same sway value at the top with that given by the beam sway model. The deformed pattern is obtained by assuming the resist is elastically deformed, and the deflected shape of a resist beam is obtained by the strength of material. In the model, a pattern is expressed in cells, and by shifting the position, a pattern deformation is expressed. A resist pattern obtained by the present model almost agrees with the experimental results.
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