Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670644 | Microelectronic Engineering | 2005 | 7 Pages |
Abstract
Hydrogen SilSesQuioxane is now known for its possibilities as negative tone e-beam resist. Good quality patterning can be obtained with low roughness. We report here the transfer of this pattern to a GaAs layer. Our aim is to fabricate nano-photonic structures with the lowest roughness and the most vertical walled profiles by means of GaAs reactive ion etching technique using SiCl4/Ar chemistry. To do so, the etching resistance of the HSQ mask needs to be strenghten and an optimization of the etching step is necessary.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Denis Lauvernier, Sophie Garidel, Christiane Legrand, Jean-Pierre Vilcot,