Improvement of etching and cleaning methods for integration of raised source and drain in FD-SOI technologies

Description of different SiGe samples (300 mm SOI wafer) under study: 1) initial silicon bulk used as a reference material, 2) SiGe layer grown by epitaxy (channel layer), 3) nitride silicon deposition (low-k dielectric layer), 4) silicon nitride etching, 5) surfaces cleaned by various processes, 6) SiGe:B layer grown by epitaxy (Raised-Source-Drain epitaxy).135