| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 538949 | Microelectronic Engineering | 2015 | 4 Pages |
•The Ir-gate AlSb/InAs HEMT on Si substrate has been studied with reliability evaluation.•The Ir-gate exhibited a superior metal work function.•The Schottky barrier height of InAs/AlSb on silicon was improved.•TEM, SIMS, and low frequency noise measurement were adopted to proof device stability.
In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slide
