| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 538952 | Microelectronic Engineering | 2015 | 7 Pages |
•A quasi-analytical model for ballistic surrounding gate MOSFET was proposed.•Quantum effects were incorporated in electrostatic characteristics.•We obtained the subband energy levels from an analytical equation set.•The model had good agreement with numerical simulations.•It was revealed that analysis along channel is essential to improve the accuracy.
A quasi-analytical model bas been developed for predicting the current–voltage characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect-transistor (MOSFET) by taking ballistic transport and quantum confinement effects into consideration. Quantum effect was incorporated in the Poisson’s equation in a self-consistent way together with the calculated subband energy levels. The model was validated with numerical simulation. Better agreements were obtained as compared with several previous models. Our results further revealed that the top of barrier (ToB) approximation is not accurate enough at large gate and drain biases; tunneling current and better electrostatic model have to be taken into account.
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