Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
539938 | Microelectronic Engineering | 2007 | 6 Pages |
Abstract
Vertical polycrystalline silicon pn-diodes have been investigated as the select device for resistive non-volatile memories. The diodes have been fabricated up to the metal-1 level using basic processing steps of a CMOS front-end-of-line for 65 nm node and beyond. The study of the electric properties reveals that polycrystalline silicon diodes have a high current density in excess of 105 A/cm2 and exhibit good rectification ratio, even at temperatures as high as 125 °C. Besides single devices, cross-point arrays with polycrystalline Silicon diodes have also been investigated.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
D.S. Golubović, A.H. Miranda, N. Akil, R.T.F. van Schaijk, M.J. van Duuren,