Analysis of low temperature RTP needs for IC metallization

We discuss the desirable properties of an RTP tool and process for low temperature (<700 °C) applications. We contrast two different approaches for heating the substrates – a “cold-wall” system in which the energy is delivered as photons, and a “hot-wall” system where heat convection and conduction are the dominant heat transfer mechanism. We present arguments for why “hot-wall” systems have distinct advantages for most processes in the low temperature regime and demonstrate our conclusions on examples of Ni and Co silicidation process.