| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543026 | Microelectronic Engineering | 2012 | 4 Pages |
Array-ordered silicon nanowires (SiNWs) were fabricated directly on n-Si substrate by wet chemical etching. The electroless plating method was used to modify SiNWs with platinum (Pt) nanoparticles as the top electrodes, forming the novel tridimensional Pt/SiNWs/n-Si/Al Schottky diode structure. The structural and electrical characteristics were investigated to obtain the optimal experimental conditions for forming the Pt/SiNWs/n-Si/Al Schottky barrier diode structures. Three key electrical parameters (ideality factors, barrier heights and series resistance) are 11.58 eV, 0.93 eV and 1.99 kΩ, respectively. The study reveals that the Pt/SiNWs/n-Si/Al Schottky diode structure would have a great potential application in nanoscale optoelectronic devices by controlling the experimental parameters properly.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► The large-scaled SiNWs were fabricated using a wet chemical etching method. ► The novel tridimensional Pt/SiNWs/n-Si/Al SB were formed by electroless plating method. ► The electrical characteristics were investigated by I–V technique. ► The optimal experimental conditions were obtained.
