Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543075 | Microelectronic Engineering | 2010 | 7 Pages |
Abstract
Implants create isolated electric charge under the channel region of nFET and pFET. By this, a new local extrema in the transfer slope is obtained while maintaining low leakage in off state. The results are explained by electro-static field simulation and yield in a circuit model with two parallel channel resistors, indicating a double channel field effect transistor (DCT). The new DCTs allow complex functions in logic or small transistor bit cells in the future.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Frank Wirbeleit,