Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543745 | Microelectronic Engineering | 2008 | 4 Pages |
Abstract
A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of TiO2, a down/up capacitive ratio close to 200 is achieved with 8 V pull-in. It is also demonstrated that, using a passivated-surface HRS and semi-suspended conductors on air, the microwave losses in the CPW line are as low as 0.1 dB/mm at 20 GHz. The reported RF MEMS shunt capacitor is expected to serve as core device for phase shifting applications in the 10–20 GHz range, both for switching operations and as a variable capacitor in distributed MEMS transmission lines (DMTLs).
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Fernández-Bolaños, J. Perruisseau-Carrier, P. Dainesi, A.M. Ionescu,