| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943643 | Microelectronic Engineering | 2014 | 7 Pages |
Abstract
- Top-down fabrication of sub-50Â nm silicon nanowire sensors with various geometries.
- Excellent performance as backgated junctionless nanowire transistors (JNTs).
- Very good sensing capabilities.
- Among the smallest top-down fabricated nanowire sensing devices reported to date.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Yordan M. Georgiev, Nikolay Petkov, Brendan McCarthy, Ran Yu, Vladimir Djara, Dan O'Connell, Olan Lotty, Adrian M. Nightingale, Nuchutha Thamsumet, John C. deMello, Alan Blake, Samaresh Das, Justin D. Holmes,