| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944019 | Microelectronic Engineering | 2013 | 7 Pages |
Abstract
- (Si)Ge channel pMOS technology offers remarkably reduced Negative Bias Temperature Instability (NBTI) at ultra-thin EOT.
- We ascribe this property to a reduced interaction of channel holes with dielectric defects thanks to energy decoupling.
- The reduced NBTI projects to a dramatic reduction of the time-dependent variability in nanoscale devices.
- Other device degradation mechanisms are shown not to constitute showstoppers.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
J. Franco, B. Kaczer, M. Toledano-Luque, Ph.J. Roussel, M. Cho, T. Kauerauf, J. Mitard, G. Eneman, L. Witters, T. Grasser, G. Groeseneken,