| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944096 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- Random telegraph noise and low-frequency noise in polysilicon device.
- The impact of electron trapping and detrapping events in scaled non-volatile memories.
- Behavior of gate oxide, interface and polysilicon traps in n-type polysilicon cylindrical vertical transistors.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Maria Glória Caño de Andrade, MarÃa Toledano-Luque, Fatma Fourati, Robin Degraeve, João Antonio Martino, Cor Claeys, Eddy Simoen, Geert Van den Bosch, Jan Van Houdt,