| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670512 | Microelectronic Engineering | 2005 | 9 Pages |
Abstract
In addition, we present a few new concepts based on ferroresistive films, strain induced enhanced ferroelectricity, and lead-free ferroelectrics which may be relevant for the future FeRAM technology. Finally, a new challenging concept of an entire organic ferroelectric field effect transistor (OFeFET) is briefly discussed.
Related Topics
Physical Sciences and Engineering
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Hardware and Architecture
Authors
H. Kohlstedt, Y. Mustafa, A. Gerber, A. Petraru, M. Fitsilis, R. Meyer, U. Böttger, R Waser,