| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670599 | Microelectronic Engineering | 2005 | 5 Pages |
Abstract
Silicon wires with nanometric dimensions have been fabricated on SIMOX wafers by means of e-beam lithography and wet chemical etchings, exploiting the underetching properties of the KOH etchant. The cross section of the resistors has a trapezoidal shape; a minimum top width of 40Â nm has been obtained. The whole process required only two writing steps. I-V characteristics were measured at room temperature as a function of the backgate voltage.
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Authors
S. Ciucci, F. D'Angelo, A. Diligenti, B. Pellegrini, G. Pennelli, M. Piotto,